著者
石岡 邦江 長谷 宗明 北島 正弘 丑田 公規
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.24, no.5, pp.288-294, 2003-05-10 (Released:2009-01-25)
参考文献数
16
被引用文献数
2 2

Coherent lattice oscillation can be excited in semimetals and semiconductors with femtosecond optical pulses. The dephasing of the coherent phonons, typically in the picosecond time scale, is dominated by the interaction with photo-excited carriers, incoherent (thermal) phonons, and defects such as impurities and vacancies. Here we present our femtosecond pump-probe study on the relaxation dynamics of the coherent phonons and the photo-excited carriers in ion-irradiated semimetals and semiconductors. The dephasing rate of the coherent optical phonon in bismuth is increased linearly with increasing ion dose due to the scattering by irradiation-induced defects. The dose dependence of the relaxation of the coherent acoustic phonon of graphite is quantitatively explained by a simple model in which a propagating wave is scattered by single vacancies, whereas that of the optical phonon by a modified mass-defect scattering model. In GaAs, the relaxation dynamics of LO phonon-plasmon coupled modes and photo-excited carriers provide quantitative information of carrier trapping due to vacancies.
著者
北島 正弘 長谷 宗明 Hrvoje PETEK
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.26, no.11, pp.648-654, 2005-11-10 (Released:2007-08-09)
参考文献数
35
被引用文献数
4 3

The progress in femtosecond laser has enabled us to observe coherent motions of lattice and molecular vibrations in solids. Nevertheless the study of coherent phonons in Si, which is an important material for modern devise application, has not been made so far. We report the dynamics of transient interaction of electrons with phonons, followed by generation of coherent optical phonon, in which the pump-probe technique with 400 nm, 10 fs laser is used for the observation. A comparison of the results is made with other semiconductors.
著者
中島 信一 長谷 宗明 溝口 幸司 播磨 弘
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.19, no.2, pp.64-71, 1998-02-10 (Released:2009-08-07)
参考文献数
35
被引用文献数
4 4

Coherent phonons can be generated in solids by ultra-short pulse laser excitation. Here we report observation of coherent phonon oscillations in the time domain using reflection type pump-probe techniques and discuss the phonon dynamics. An A1g phonon mode was observed for Bi, showing an exponentially decaying oscillation. Temperature dependence of the phonon frequency and the decay rate agrees with the result of Raman measurements. This indicates that the decay process of the coherent phonon is dominated by an anharmonic decay route of energy relaxation. The coherence of phonons in time domain was examined using a double-pulse excitation technique. The oscillation amplitude of the A1g mode in Bi enhances when the pulse separation time is equal to the period of the phonon oscillation, and vanishes when the separation time is adjusted to half integral multiples of the period. We present furthermore the results on coherent folded acoustic modes in GaAs/AlAs superlattices.
著者
大高 正 川田 洋揮 宍戸 千絵 大崎 真由香
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.27, no.11, pp.636-641, 2006-11-10 (Released:2007-04-04)
参考文献数
12
被引用文献数
1

The design rule of semiconductor devices in 1984s, when optical microscope was used for critical dimension measurement of device patterns, was around 1.3 µm. Instead of the optical microscope which did not provide enough resolution for the further device shrinkage, CD-SEM (Critical-Dimension Scanning Electron Microscope) was used for 1 µm or smaller design rule. This report introduces recent CD-SEM technologies and future prospect for such smaller design rule. Furthermore, evaluation of CD-measurement accuracy is introduced. It consists of short-term and long-term repeatabilities and tool-to-tool matching. A new linewidth-measurement algorithm is implemented for better short-term repeatability. A method of contrast-gradient is used for tool-to-tool matching. A traceable standard-sample for magnification calibration is also used.
著者
古崎 昭
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.32, no.4, pp.209-215, 2011-04-10 (Released:2011-04-19)
参考文献数
20
被引用文献数
1 1 1

A brief review is given on the symmetry-based classification of topological insulators and topological superconductors for spatial dimensions 1, 2, and 3. Several representative examples are discussed.
著者
小澤 健一 大塲 由香子 枝元 一之 十河 真生
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.29, no.7, pp.407-412, 2008-07-10 (Released:2008-07-18)
参考文献数
28
被引用文献数
1 1

Angle-resolved photoemission measurements are carried out to investigate the valence electronic structures of two different ZnO surfaces that are (0001) Zn-terminated (ZnO-Zn) and (000-1) O-terminated (ZnO-O) surfaces, and also of Cu clusters supported on these surfaces. On the clean ZnO surfaces, two valence bands are observed at ∼4 and 5−8 eV with a clear dispersion feature. Although these bands are associated with the bulk bands, it is found that the dispersion widths of the bands exhibit the termination dependence of the polar ZnO surfaces. Deposition of Cu on the polar ZnO surfaces induces downward bending of the ZnO band. Magnitude of Cu-induced bending is larger on ZnO-O than on ZnO-Zn. This indicates that the Cu—ZnO interface interaction is greater for the Cu/ZnO-O system than for the Cu/ZnO-Zn system. The analysis of the Cu 3d band structure implies that coupling between the Cu 3d band and the ZnO band is operative at the Cu—ZnO-O interface, whereas such coupling seems to be missing at the Cu—ZnO-Zn interface. We propose that the effect of electronic coupling is one of the factors that determine the interface interaction between the Cu cluster and polar ZnO surfaces.
著者
都甲 潔
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.27, no.1, pp.34-38, 2006-01-10 (Released:2007-07-07)
参考文献数
12
被引用文献数
6 3

A taste sensor is composed of several kinds of lipid/polymer membranes for transforming information of taste substances into electric signal. The sensor output shows different patterns for chemical substances which have different taste qualities such as saltiness and sourness. Taste interactions such as suppression effect, which occurs between bitterness and sweetness, can be detected and quantified using the taste sensor. The taste and also smell of foodstuffs such as beer, coffee, tea, mineral water, soup and milk can be discussed quantitatively. The taste sensor provides the objective scale for the human sensory expression. We are now standing at the beginning of a new age of communication using digitized taste.
著者
山下 良之 山本 達 向井 孝三 吉信 淳 原田 慈久 徳島 高 高田 恭孝 辛 埴 赤木 和人 常行 真司
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.26, no.9, pp.514-517, 2005-09-10 (Released:2008-04-08)
参考文献数
20
被引用文献数
1 1

Understanding the SiO2/Si interface on atomic level is an important subject for fabricating silicon based superior devices. However, despite of many studies on the SiO2/Si interface, the interfacial electronic states have been evaluated as the average, but not specifically with individual states. In the present study, we successfully observed the electronic states of particular atoms at the SiO2/Si interface for the first time, using soft X-ray absorption and emission spectroscopy. The interfacial states are noticeably different from those of the bulk SiO2 and strongly depend on the intermediate oxidation states at the interface. Furthermore, comparing the experimental results to theoretical calculations reveals the local interfacial structures.
著者
馬場 祐治 下山 巖 関口 哲弘
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.23, no.7, pp.417-422, 2002-07-10 (Released:2008-09-01)
参考文献数
18
被引用文献数
1 1

Solid carbon forms two kinds of local structures, i.e., diamond-like and two-dimensional graphite structures. In contrast, silicon carbide tends to prefer only diamond structure that is composed of sp3 bonds. In order to clarify whether or not two-dimensional graphitic SixC layer exists, we investigate the local structures of SixC layer produced by Si+-ion implantation into highly oriented pyrolitic graphite (HOPG) by means of near-edge X-ray absorption fine structure (NEXAFS). The energy of the resonance peak in the Si K-edge NEXAFS spectra for Si+-implanted HOPG is lower than those for any other Si-containing materials. The intensity of the resonance peak showed a strong polarization dependence. These results suggest that the final state orbitals around Si atoms have π*-like character and the direction of this orbital is perpendicular to the graphite plane. It is elucidated that the Si-C bonds produced by the Si+-ion implantation are nearly parallel to the graphite plane, and SixC phase forms a two-dimensionally spread graphite-like layer with sp2 bonds.
著者
疋田 真也 田中 敬二 中村 哲也 高原 淳 梶山 千里
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.26, no.9, pp.559-563, 2006-09-10 (Released:2008-04-08)
参考文献数
17
被引用文献数
1 1

A simple and easy method to prepare super-hydrophobic surface was proposed. Sol-gel films were prepared by hydrolysis and condensation of alkoxysilane compounds. The roughness and free energy at the film surface were controlled by changing the amounts of colloidal silica particles and fluoroalkylsilane, respectively. When both amounts were optimized in a sol-gel film, the surface exhibited an excellent repellency to not only water but also oil. The sol-gel film obtained could be coated onto any solid substrate by a single process. The durability and transparency of the coated layers were sufficient to be applied for practical uses.

1 0 0 0 OA 先端追跡

出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.27, no.9, pp.549, 2006-09-10 (Released:2007-06-15)
著者
原 史朗
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.29, no.6, pp.375-381, 2008-06-10 (Released:2008-06-22)
参考文献数
12

We developed an Encapsulated Production System (EPS) composed of the human space and the product space. The product space is isolated from the human space in protection from penetration of particle and gas in the human space. Concentrations of oxygen, particle, and dissolved oxygen in solutions in the product space are of 5 orders of magnitude lower than those in atmosphere. As an experimental application of the system to the control of semiconductor surface and interface, we formed Schottky barrier diodes of Al/Si(111) interface in the EPS system and investigated diode leakage currents. It was found that electrically-ideal interfaces with no leakage current and no fluctuation of Schottky barrier heights were formed in the system.