著者

Min Kyung Sun Huh Youngjae Jae Kim Sung Hoon Wijk Robert Jan van Dubbledam Gert Maaskant Nico

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.37, no.4, pp.2089-2093, 1998

被引用文献数

5

---

A new recordable optical disc which has the advantages of low material cost and wavelength dependence was proposed. It consists of a polycarbonate (PC) substrate, a metal thin film, an organic buffer layer, a metal reflective layer and an overcoat. Its recording mechanism was investigated by atomic force microscopy observation of each layer surface and the recording characteristics were evaluated. It was observed that the recording mechanism involves the thermal deformations of the PC substrate, the thin metal film and the organic buffer layer and the recording characteristics are equal to those of a dye-based CD-R.

著者

Ogai Keiko Kimura Yoshihide Shimizu Ryuichi Ishibashi Kouji Aoyagi Yoshinobu Namba Susumu

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.30, no.11, pp.3272-3276, 1991-11-20

被引用文献数

6

---

A novel type of electron blprism was made using a microprocess technique. This electron biprism is composed of several filaments lined in parallel on a silicon nitride membrane. Using this type of multi-biprism, we observed an electric field by electron interferometry and confirmed the potentiality of extending this technique to a local electric field.

著者

Meng Jianwei Jiang Jun Geng Wenping Chen Zhihui Zhang Wei Jiang Anquan

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.54, no.2, 2015-01-19

被引用文献数

3

---

We fabricated (00l) BiFeO<inf>3</inf>(BFO) thin films in different growth modes on SrRuO<inf>3</inf>/SrTiO<inf>3</inf>substrates using a pulsed laser deposition technique. X-ray diffraction patterns show an out-of-plane lattice constant of 4.03 Å and ferroelectric polarization of 82 µC/cm²for the BFO thin film in a layer-by-layer growth mode (2D-BFO), larger than 3.96 Å and 51 µC/cm²for the thin film in the 3D-island formation growth mode (3D-BFO). The 2D-BFO thin film at 300 K shows switchable on/off diode currents upon polarization flipping near a negative coercive voltage, which is nevertheless absent from the above 3D-BFO thin film. From a positive-up–negative-down pulse characterization technique, we measured domain switching current transients as well as polarization–voltage (P<inf>f</inf>–V<inf>f</inf>) hysteresis loops in both semiconducting thin films. P<inf>f</inf>–V<inf>f</inf>hysteresis loops after 1 µs-retention time show the preferred domain orientation pointing to bottom electrodes in a 3D-BFO thin film. The poor retention of the domains pointing to top electrodes can be improved considerably in a 2D-BFO thin film. From these measurements, we extracted domain switching time dependence of coercive voltage at temperatures of 78–300 K. From these dependences, we found coercive voltages in semiconducting ferroelectric thin films much higher than those in insulating thin films, disobeying the traditional Merz equation. Finally, an equivalent resistance model in description of free-carrier compensation of the front domain boundary charge is developed to interpret this difference. This equivalent resistance can be coincidently extracted either from domain switching time dependence of coercive voltage or from applied voltage dependence of domain switching current, which drops almost linearly with the temperature until down to 0 in a ferroelectric insulator at 78 K.

著者

Koide Daiichi Yanagisawa Hitoshi Tokumaru Haruki Nakamura Shoichi Ohishi Kiyoshi Inomata Koichi Miyazaki Toshimasa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.43, no.7, pp.4811-4815, 2004-07-15

参考文献数

8

被引用文献数

1 9

---

We describe the effectiveness of feed-forward control using the zero phase error tracking method (ZPET-FF control) of the tracking servo for high-data-transfer-rate optical disk drives, as we are developing an optical disk system to replace the conventional professional videotape recorder for recording high-definition television signals for news gathering or producing broadcast contents. The optical disk system requires a high-data-transfer-rate of more than 200 Mbps and large recording capacity. Therefore, fast and precise track-following control is indispensable. Here, we compare the characteristics of ZPET-FF control with those of conventional feedback control or repetitive control. Experimental results show that ZPET-FF control is more precise than feedback control, and the residual tracking error level is achieved with a tolerance of 10 nm at a linear velocity of 26 m/s in the experimental setup using a blue-violet laser optical head and high-density media. The feasibility of achieving precise ZPET-FF control at 15000 rpm is also presented.

著者

Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25

被引用文献数

1

---

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.

著者

Hosoda Yasuo Higuchi Takanobu Shida Noriyoshi Imai Tetsuya Iida Tetsuya Kuriyama Kazumi Yokogawa Fumihiko

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3587-3590, 2005

被引用文献数

4

---

We realized an inorganic write-once disk for an optical recording system of the Blu-ray disk format. We developed a new Al alloy for the reflective layer and a Nb-compound oxide nitride material for the dielectric layer. By adopting these materials for the reflective layer and the dielectric layer of our write-once disk, we achieved complete exclusion of toxic substances specified in the pollutant release and transfer register (PRTR) law. That is, this disk did not contain any substances specified in the PRTR law. We confirmed this disk to be compatible with 1&times; to 2&times; recording at the user capacity of 25.0 GB. The bottom jitter values of both 1&times; and 2&times; were less than 6.0%. In addition, we developed another kind of substrate, which was made of a natural polymer derived from corn starch. The bottom jitter value was 6.0% at the user capacity of 25.0 GB with the limit equalizer.

著者

Kim Yoon Shim Won Park Byung-Gook

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.54, no.6, 2015-05-26

被引用文献数

2

---

In this paper, we report the fabrication and analysis of the gated twin-bit NAND flash memory with a nitride charge-trapping layer. This device is based on the recessed channel structure, and it has an additional cut-off gate that enables 2-bit operation. Therefore, the density of the array can be doubled without any difficulty in patterning. The fabrication method for gated twin-bit (GTB) silicon–oxide–nitride–oxide–silicon (SONOS) memories and their electrical characteristics are described in this paper. Program/erase characteristics are observed and the 2-bit operation is verified by the forward–reverse reading scheme.

著者

Ma Yitao Miura Sadahiko Honjo Hiroaki Ikeda Shoji Hanyu Takahiro Ohno Hideo Endoh Tetsuo

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.4, 2016-03-29

被引用文献数

13

---

A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

著者

Yamaguchi Atsushi Kodama Yasuhiro Matsuo Hiroto Ohno Minoru Osugi Satomi Maeno Yoshiaki Higuchi Masahiro

出版者

INSTITUTE OF PURE AND APPLIED PHYSICS

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.8, pp.6326-6327, 2006-08-15

---

Polylactic acid (PLA) is a biomass material made of starch. Compact disc recordable (CD-R) discs with a PLA substrate were prepared and their properties were measured. Although the glass transition point of PLA is lower than that of polycarbonate (PC), the PLA substrate is usable for CD-R discs. It was confirmed that the substrate is usable for recordable optical discs at temperatures under 50 °C.

著者

Yamaguchi Atsushi Hibino Katsutoshi Suzuki Yoshihisa Terasaki Hitoshi Ichiura Shuichi

出版者

INSTITUTE OF PURE AND APPLIED PHYSICS

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.2, pp.1129-1130, 2006-02-15

---

A laser beam axis compensator was fabricated for an optical pickup unit with blue and red lasers. The device consisted of multiwavelength wave plates and a double-refractive-index material. The wave plates were realized by a photonic crystal technique. By measuring the beam profiles of the blue and red lasers, the device was confirmed to function as a laser axis compensator. Under 110 μm laser beam axis shift setting conditions, readout signal patterns from an optical disc were measured.

著者

Sun Wen-Shing Lin Yan-Nan Chang Jenq-Yang

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.9, pp.09MA03-09MA03-9, 2011-09-25

被引用文献数

1

---

An optical design is developed for a Blu-ray pickup head with a laser expander that can synchronously detect the linear displacement and two-dimensional angular tilts at the test plane. To improve the signal accuracy of the photo detector, a laser expander is used to transform the shape of the laser beam from elliptical to circular. A quadrant detector as used to detect the relative relationship between the $V_{\text{A}}$, $V_{\text{B}}$, $V_{\text{C}}$, $V_{\text{D}}$ signals, can be used to measure the tilt angle and displacement at the test plane. Measurement detection and analysis is based on one normalized focus error signal (NFES) and two angular signals. The optical efficiency of the Blu-ray pickup head with laser expander is 59.29%. The optical efficiency of the currently used commercial pickup head is only 8.08%. Tolerance analysis is also considered in the performance requirements.

著者

Kang Sung-Mook Lee Jin-Eui Kim Wan-Chin Park No-Cheol Park Young-Pil Cho Eun-Hyoung Sohn Jin-Seung Suh Sung-Dong

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.8, pp.6723-6729, 2006-08-30

被引用文献数

12

---

In this study, a small-form-factor optical pickup (SFFOP), corresponding to the Blu-ray disc (BD) specifications has been developed. The developed SFFOP is composed of an integrated optical pickup and a swing-arm-type actuator. The integrated optical pickup has been developed in the form of an array using wafer-level fabrication technology. The developed SFFOP is composed of the fundamental optics which yields a numerical aperture (NA) of 0.85 and uses a blue laser diode having a short wavelength of 407 nm and a silicon optical bench, which consists of a laser diode, a photodiode and several mounts for the laser diode, an objective lens and mirrors. The micro objective lens is bonded to the lens holder on the SFFOP by an active alignment using a modified Mach–Zehnder interferometer. Also, a static focus error signal was detected to assemble a polarized holographic optical element. Through the measurement of the focus error signal with a swing-arm-type actuator, which was developed for the SFFOP, it is estimated that the developed SFFOP satisfies the BD specifications with the balance of the focus error signal below 10%.

著者

Sohn Jin-Seung Cho Eun-Hyoung Lee MyungBok Kim Hae-Sung Jung MeeSuk Suh Sung-Dong Kim Wan-Chin Park No-Cheol Park Young-Pil

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.2, pp.1144-1151, 2006-02-15

被引用文献数

1 4

---

A microlens of numerical aperture (NA) 0.85 a small-form-factor optical pickup, following the specifications of the Blu-ray disc (BD), was designed, fabricated and evaluated. To avoid difficulties in the fabrication of a high-NA objective lens and to obtain a low chromatic aberration, a new hybrid lens unit was designed to have a refractive lens and a diffractive lens. The micro-plano-aspheric refractive lens was fabricated using glass molding technology, and the diffractive lens was fabricated in a two-dimensional array using the electron beam mastering and consecutive UV embossing process. For the evaluation of the developed lens unit, diffraction efficiency was measured with the proposed diffraction efficiency measurement method, and the wavefront error of the lens unit was evaluated using a modified Mach–Zehnder interferometer. The measured average efficiency of the diffractive lens was approximately 85% and the RMS wavefront error of the lens unit was 0.0376 $\lambda$rms.

著者

Ono Yukinori Zimmerman Neil M. Yamazaki Kenji Takahashi Yasuo

出版者

Japan Society of Applied Physics

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.42, no.10, pp.L1109-L1111, 2003-10-01

参考文献数

19

被引用文献数

7 23

---

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency $f$ of ${\sim}1$ MHz and a phase shift of $\pi$, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

著者

Fillard Jp Montgomery P. Gall P. Asgarinia M. Bonnafe J.

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.27, no.3, pp.384-388, 1988-03-20

被引用文献数

5

---

Careful measurements of the changes induced by photoquenching in the infra red transmission image of GaAs wafers at Liquid Nitrogen temperature shows an important enhancement of the mean light level and disappearance of the usual fourfold feature; but it also shows that the contrast of the pattern (cell structure) is not affected at all. The contribution of EL2 centres to the image is questioned; it is deduced from these results that photoquenchable EL$^{0}2$ centres are slightly more abundant in the cells than in the walls. In large cell materials an intermediate zone is found surrounding the cells and containing higher EL$^{0}2$ densities. This sheds new light on the role of the dislocations; these results are discussed and compared with etching and luminescence images.

著者

Miyata Emi Kouno Hirohiko Kamiyama Daisuke Kamazuka Tomoyuki Mihara Mototsugu Fukuda Mitsunori Matsuta Kensaku Tsunemi Hiroshi Minamisono Tadanori Tomida Hiroshi Miyaguchi Kazuhisa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.42, no.7, pp.4564-4570, 2003-07-15

参考文献数

18

被引用文献数

5

---

We have investigated the radiation damage effects on a charge-coupled device (CCD) to be used for the Japanese X-ray mission, the monitor of all-sky X-ray image (MAXI), onboard the international space station (ISS). A temperature dependence of the dark current as a function of incremental dose is studied. We found that the protons having energy of ${>}292$ keV seriously increased the dark current of the devices. In order to improve the radiation tolerance of the devices, we have developed various device architectures to minimize the radiation damage in orbit. Among them, nitride oxide enables us to reduce the dark current significantly and therefore we adopted nitride oxide for the flight devices. We also compared the dark current of a device in operation and that out of operation during the proton irradiation. The dark current of the device in operation became twofold that out of operation, and we thus determined that devices would be turned off during the passage of the radiation belt. The temperature dependence of the dark current enables us to determine the electron trap level that generates the dark current. We fitted dark current as a function of temperature by the thoretical models and found that the dark current increase after proton irradiations is caused by, at least, two kinds of electron trap levels. The shallow trap level ($E_{\text{c}}-E_{\text{t}} < 0.2$ eV where $E_{\text{c}}$ and $E_{\text{t}}$ are the energy at the bottom of the conduction band and the energy level of electron trap) might be associated with oxygen which is dominant at the operating temprature of ${>}210$ K. On the other hand, another trap level is located roughly at the center of the silicon bandgap which might be associated with divacancies or P–V traps. We finally investigated the spatial distribution of the low-energy protons in the orbit of the ISS. Their density has a peak around $l \sim 20{{\degree}}$ and $b \sim -55{{\degree}}$ independent of the altitude. The peak value is roughly two orders of magnitude higher than that at the South Atlantic Anomaly.

著者

Yamamoto Keiji

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.4, pp.2043-2048, 1995-04-15

参考文献数

10

被引用文献数

1

---

A mechanical stress simulator for surface-mount devices was developed, which employed the finite-element method. The moisture distribution stage can calculate the moisture distribution of the LSI package exposed to temperature and humidity conditions. The heat conduction stage determines the time-dependent temperature distribution of the package immersed in a solder bath. Using the moisture and temperature distributions thus calculated, the mechanical stress stage gives the mechanical stress distribution in the package. Two groups of samples were prepared for solder dipping experiments. In one group, after dry baking for initialization, samples absorbed moisture by exposure at 30&deg;C 85% (absorption process). In the other group, samples were exposed at 85&deg;C 85% for 168 h and then dry-baked at 70&deg;C (desorption process). These two groups have different moisture distributions in their packages. The results of solder dipping experiments are analyzed from the calculated mechanical stress values. In the absorption process, calculated maximum von Mises equivalent stress over the sectional molding compound $\bar{\sigma}_{\rm max}$ increases monotonically with absorption time. Then, $\bar{\sigma}_{\rm max}$ approaches its saturated value as absorption time tends to infinity. In the desorption process, $\bar{\sigma}_{\rm max}$ decreases with desorption time and approaches the thermal stress value when desorption time tends to infinity. These calculations explain the effect of moisture distribution on package cracking.

著者

Li Tsung-Lung Ting Jyh-Hua

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.8, pp.6327-6331, 2005

被引用文献数

3

---

The temporal saturation effects of the critical dimensions of nanoscale contact holes are investigated by a two-dimensional reaction–diffusion simulator for the chemical shrink techniques of nanolithography. Models included with the simulator are the crosslinking reaction of water-soluble polymers and crosslinkers, the diffusion of photoacids, and the inactivation of photoacids. Within the the statistical errors of the experimental data, the simulation critical dimensions agree with the experiment for baking temperatures over 105°C and for all baking times. It is found that the temporal saturation of the contact holes' critical dimensions can be explained by the photoacid inactivating reaction included in the simulator.

著者

Sekiguchi Atsushi Isono Mariko Matsuzawa Toshiharu

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.38, no.8, pp.4936-4941, 1999

被引用文献数

8

---

By incorporating baking equipment into a Fourier transform infrared (FT-IR) spectrometer, a deprotection reaction parameter measurement system that can be used with chemically amplified resists has been developed. This system allows us to study new models for chemically amplified (CA) resists by including into a conventional deprotection reaction model an initial delay effect and a quencher effect. This model is also used to measure deprotection reaction parameters. The parameters thus obtained are inputted into a lithography simulator PROLITH/2 to perform profile simulations. The results are compared with those of scanning electron microscope (SEM) observations. Although the simulation results and SEM observations are not in complete agreement, the general trends observed are in adequate agreement. These results confirm the applicability of the proposed model to CA resists for ArF excimer laser lithography and verify the usefulness of the measurement system.

著者

Araki Hisashi * Anvar Saiki Eiji Yamasaki Nobuo Yakushi Kyuya Yoshino Katsumi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.34, no.8, pp.L1041-L1044, 1995-08-15

参考文献数

22

被引用文献数

16

---

Superconductivity in poly(3-alkylthiophene)- C60 composite (PAT- C60) is found upon doping by potassium from vapor phase. The superconducting (SC) transition at T C=17 K is detected by superconducting quantum interference device (SQUID), which showed 0.8% of SC fraction for C60 content of 5 mol%. An exceptionally strong low-field microwave absorption (LFMA) implies the existence of granular SC phase. A rather small hysteresis of LFMA indicates the important role of the Josephson weak link network, probably formed between SC K xC60 clusters separated by conductive K xPAT barriers. ESR of PAT(C60) yK x composite shows two types of lines: one from negative polarons P- in PAT chains, and another assigned to K xC60 clusters and C1-60 radical.