著者
Narahara A. Ito K. Suemasu T. Takahashi Y. K. Ranajikanth A. Hono K.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.94, no.20, pp.202502, 2009-05
被引用文献数
62 29

The spin polarization of (100)-oriented gamma[prime]-Fe4N layers grown on MgO(001) substrates by molecular beam epitaxy was deduced from point contact Andreev reflection measurements, and the value was compared with that of alpha-Fe. The spin polarization (P) for gamma[prime]-Fe4N is approximately 0.59 at 7.8 K. This value is distinctly larger than that for alpha-Fe (P=0.49 at 7.8 K) measured with an identical setting. The mechanism of enhanced spin polarization in gamma[prime]-Fe4N is discussed.
著者
Fukata N. Mitome M. Bando Y. Seoka M. Matsushita S. Murakami K. Chen J. Sekiguchi T.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.93, no.20, pp.203106, 2008-11
被引用文献数
33 20

Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.
著者
Ko J.-H. Kojima S. Koo T.-Y. Jung J. H. Won C. J. Hur N. J.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.93, no.10, pp.102905, 2008-09
被引用文献数
69 45

A strong relaxation mode was observed in the paraelectric phase of barium titanate (BaTiO3) single crystals by Brillouin scattering study and was found to correlate with the softening of the longitudinal acoustic mode and the increase in the hypersonic damping. These observations support the existence of polar percursors and their electrostrictive coupling with the strain caused by the acoustic waves, consistent with former studies evidencing off-centered Ti ions in the high-symmetry cubic phase. A critical slowing down has been clearly observed in the vicinity of the cubic-tetragonal phase transition, indicating order-disorder component contributes to the phase transition of BaTiO3.
著者
Fukata N. Chen J. Sekiguchi T. Matsushita S. Oshima T. Uchida N. Murakami K. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.90, no.15, pp.153117, 2007-04
被引用文献数
40 32

Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P Kalpha line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.
著者
Fukata N. Chen J. Sekiguchi T. Okada N. Murakami K. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.89, no.20, pp.203109, 2006-11
被引用文献数
54 38

Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm−1 by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650–680 cm−1 after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H–B passivation centers.
著者
Umeda T. Okonogi K. Ohyu K. Tsukada S. Hamada K. Fujieda S. Mochizuki Y.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.88, pp.253504, 2006-06
被引用文献数
25 18

The variable retention time phenomenon has recently been highlighted as an important issue in dynamic random access memory (DRAM) technology. Based on electrically detected magnetic resonance and simulation studies, we suggest that a single Si vacancy-oxygen complex defect is responsible for this phenomenon, when the defect is embedded in the near surface drain-gate boundary of a DRAM cell.
著者
Paul G. K. Nawa Y. Sato H. Sakurai T. Akimoto K.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.88, no.14, pp.141901, 2006-04
被引用文献数
88 41

Hole traps in p-type Cu2O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu2O/i-ZnO/n-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to Cu vacancy, we found a new trap level at about 0.25 eV. The new trap is tentatively assigned as Cu-di-vacancy from the trap concentration dependence on oxygen flow rate and substrate temperature.
著者
Fukata N. Oshima T. Murakami K. Kizuka T. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.86, no.21, pp.213112, 2005-05
被引用文献数
79 50

A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift and broadening can be interpreted by the phonon confinement effect. Further thermal oxidation produced a reverse change; namely, an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.
著者
Yoshikawa M. Yasuhara R. Morimoto M. Shima Y. Kohagura J. Sakamoto M. Nakashima Y. Imai T. Yamada I. Kawahata K. Funaba H. Minami T.
出版者
American Institute of Physics
雑誌
Review of scientific instruments (ISSN:00346748)
巻号頁・発行日
vol.83, no.10, pp.10E333, 2012-10
被引用文献数
17 6

In the GAMMA 10 tandem mirror, the typical electron density is comparable to that of the peripheral plasma of torus-type fusion devices. Therefore, an effective method to increase Thomson scattering (TS) signals is required in order to improve signal quality. In GAMMA 10, the yttrium-aluminum-garnet (YAG)-TS system comprises a laser, incident optics, light collection optics, signal detection electronics, and a data recording system. We have been developing a multi-pass TS method for a polarization-based system based on the GAMMA 10 YAG TS. To evaluate the effectiveness of the polarization-based configuration, the multi-pass system was installed in the GAMMA 10 YAG-TS system, which is capable of double-pass scattering. We carried out a Rayleigh scattering experiment and applied this double-pass scattering system to the GAMMA 10 plasma. The integrated scattering signal was made about twice as large by the double-pass system.
著者
Koshelev A. E. Buzdin A. I. Kakeya I. Yamamoto T. Kadowaki K.
出版者
American Physical Society
雑誌
Physical review B (ISSN:10980121)
巻号頁・発行日
vol.83, no.22, pp.224515, 2011-06
被引用文献数
9

In strongly anisotropic layered superconductors in tilted magnetic fields, the Josephson vortex lattice coexists with the lattice of pancake vortices. Due to the interaction between them, the dissipation of the Josephson vortex lattice is very sensitive to the presence of the pancake vortices. If the c-axis magnetic field is smaller than the corresponding lower critical field, the pancake stacks are not formed but the individual pancakes may exist in the fluctuational regime either near the surface in large-size samples or in the central region for small-size mesas. We calculate the contribution of such fluctuating pancake vortices to the c-axis conductivity of the Josephson vortex lattice and compare the theoretical results with measurements on small mesas fabricated out of Bi2Sr2CaCu2O8+δ crystals. A fingerprint of fluctuating pancakes is a characteristic exponential dependence of the c-axis conductivity observed experimentally. Our results provide strong evidence of the existence of the fluctuating pancakes and their influence on the Josephson vortex lattice dissipation.
著者
Matsubayashi K. Sugai H. Shimono A. Hattori T. Ozaki S. Yoshikawa T. Taniguchi Y. Nagao T. Kajisawa M. Shioya Y. Bland-Hawthorn J.
出版者
IOP Publishing
雑誌
The Astrophysical Journal (ISSN:0004637X)
巻号頁・発行日
vol.761, no.1, 2012-12-10
被引用文献数
3

銀河の「帽子」に吹き付ける強力な風 : M82の銀河風、4万光年先のガス雲と衝突中. 京都大学プレスリリース. 2012-12-27.
著者
Destici Eugin Oklejewicz Małgorzata Saito Shoko van der Horst Gijsbertus T.J.
出版者
Landes Bioscience
雑誌
Cell cycle (ISSN:15384101)
巻号頁・発行日
vol.10, no.21, pp.3788-3797, 2011-11
被引用文献数
21 8

By gating cell cycle progression to specific times of the day, the intracellular circadian clock is thought to reduce the exposure of replicating cells to potentially hazardous environmental and endogenous genotoxic compounds. Although core clock gene defects that eradicate circadian rhythmicity can cause an altered in vivo genotoxic stress response and aberrant proliferation rate, it remains to be determined to what extent these cell cycle related phenotypes are due to a cell-autonomous lack of circadian oscillations. We investigated the DNA damage sensitivity and proliferative capacity of cultured primary Cry1‑/-
著者
Peng D. L. Sumiyama Kenji Yamamuro S. Hihara Takehiko Konno T. J. ヒハラ タケヒコ スミヤマ ケンジ 隅山 兼治 日原 岳彦 Sumiyama K. Hihara T.
出版者
American Institute of Physics
雑誌
APPLIED PHYSICS LETTERS (ISSN:00036951)
巻号頁・発行日
vol.74, no.1, pp.76-78, 1999-01-04
被引用文献数
33

We have studied electrical conductivity, σ, and magnetoresistance in a CoO-coated monodispersive Co cluster assembly fabricated by a plasma-gas-aggregation-type cluster beam deposition technique. The temperature dependence of σ is described in the form of log σ vs 1/T for 7<T<80 K. The magnetoresistance ratio (ρ0-ρ3T)/ρ0 increases sharply with decreasing temperature below 25 K: from 3.5% at 25 K to 20.5% at 4.2 K. This marked increase (by a factor of 6) is much larger than those observed for conventional metal-insulator granular systems. These results are ascribed to the Coulomb blockade effect in the monodispersed cluster assemblies.
著者
Fu Pingqing Kawamura Kimitaka Kobayashi Minoru Simoneit Bernd R. T.
出版者
Elsevier
雑誌
Atmospheric Environment (ISSN:13522310)
巻号頁・発行日
vol.55, pp.234-239, 2012-08
被引用文献数
154

Sugars are important water-soluble organic constituents of atmospheric particulate matter (PM). In order to better understand the sources and seasonal variations of sugars in aerosols, primary saccharides (fructose, glucose, sucrose, and trehalose) and sugar alcohols (arabitol and mannitol), together with levoglucosan, have been studied in ambient aerosols at Gosan, Jeju Island in the western North Pacific, the downwind region of the Asian outflow, using gas chromatography-mass spectrometry. The results showed that the sugar composition varied seasonally with a total concentration range of 6.8-1760 ng m^[-3] (mean 246 ng m^[-3]). The total identified sugars had the highest concentration in April, the spring bloom season at Jeju Island, when sucrose contributed up to 80% of the total sugars. The dominance of sucrose was also detected in pollen samples, suggesting that pollen can contribute significantly to sucrose in aerosols during the spring bloom. The seasonal variation of trehalose is consistent with those of non-sea-salt Ca2+ and δ13C of total carbon with elevated levels during the Asian dust storm events. This study indicates that sugar compounds in atmospheric PM over East Asia can be derived from biomass burning, Asian dust, and primary biological aerosols such as fungal spores and pollen. Furthermore, this study supports the idea that sucrose could be used as a tracer for airborne pollen grains, and trehalose as a tracer for Asian dust outflow.
著者
Toko K. Kurosawa M. Saitoh N. Yoshizawa N. Usami N. Miyao M. Suemasu T.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.101, no.7, pp.072106, 2012-08
被引用文献数
88 20

(111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 °C) and the native-oxidized Al (AlOx) diffusion-control layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.