著者

橋場 正男 廣畑 優子 日野 友明 新堀 寛 出山 貞夫 千代田 博宜

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.42, no.12, pp.1100-1105, 1999-12-20

参考文献数

17

被引用文献数

1

---

The gas desorption properties of carbon based materials coated on inner wall of a cathode ray tube were examined by using a technique of thermal desorption spectroscopy (TDS). This material consists of graphite powder, titanium oxide (TiO<SUB>2</SUB>) powder and water glass. The major outgassing species observed in the temperature range from RT to 500&deg;C were CO<SUB>2</SUB> and H<SUB>2</SUB>O. The major outgassing source was graphite. In order to reduce the gas desorption in the cathode ray tube, the heat treatment with temperature higher than 400-500&deg;C is necessary.<BR>Since the surface morphology of graphite-water glass material was dense, the degassing was insufficient by baking treatment in the atmosphere. On the other hand, the degassing was very easy for graphite-TiO<SUB>2</SUB>-water glass material, because of the porous structure.<BR>The gas adsorption experiments were also conducted. The adsorption amount of H<SUB>2</SUB>O or CO<SUB>2</SUB> increased as the composition ratio of graphite powder. The gas adsorption capacity largely increased by the addition of TiO<SUB>2</SUB> powder into the graphite-water glass material. The enhancement of adsorption capacity is due to that the surface structure became porous and also the effective surface area large by the addition of TiO<SUB>2</SUB> powder.

著者

窪田 好浩 辰巳 敬

出版者

一般社団法人 日本真空学会

雑誌

真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN (ISSN:05598516)

巻号頁・発行日

vol.49, no.4, pp.205-212, 2006-04-20

参考文献数

68

被引用文献数

4

著者

福谷 克之

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.56, no.6, pp.204-209, 2013 (Released:2013-06-28)

参考文献数

2

被引用文献数

1 4

---

Any vacuum chamber has interior surfaces of the chamber facing toward the vacuum. Interaction of gas molecules with the chamber surface including scattering, adsorption and desorption is thus of particular importance for vacuum technology. The present article describes fundamental concepts of gas-surface interaction, which encompass the thermal accommodation coefficient, cosine law, adsorption potential, mean time of sojourn and adsorption isotherm.

著者

中島 章

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.58, no.11, pp.417-423, 2015 (Released:2015-11-26)

参考文献数

78

被引用文献数

2

---

Wettability control of a solid against a liquid is widely investigated in industry for application to daily life because it can produce various physical and chemical phenomena related to solids and liquids, achieving beneficial purposes. Recent researches revealed that static and dynamic wettability are affected by nano-scale surface characteristics on the solids, and the importance of the viewpoint from materials science is gradually increasing in this topic. This paper presents a short review of the studies on the superhydrophilicity of TiO2 photocatalyst, processing and properties of superhydrophobic materials, and control of dynamic hydrophobicity, mainly of the past decade of our group.

著者

高橋 洋平 鈴木 茂

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.49, no.2, pp.97-103, 2006 (Released:2006-10-17)

参考文献数

23

著者

岡田 至崇

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:18822398)

巻号頁・発行日

vol.55, no.12, pp.556-561, 2012-12-20

参考文献数

39

被引用文献数

2

---

&nbsp;&nbsp;In order to surpass the theoretical Shockley-Queisser limit of energy conversion efficiency of a single-junction solar cell, advanced concepts using multi-junction tandem structures and quantum nanostructures are presently under intense research. Recent developments and future research opportunities with quantum nanostructure photovoltaics are reviewed.<br>

著者

林 主税

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:18822398)

巻号頁・発行日

vol.52, no.6, pp.303-312, 2009-06-20

被引用文献数

1

著者

後藤 康仁

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.59, no.7, pp.184-191, 2016 (Released:2016-07-16)

参考文献数

25

被引用文献数

2

---

In this article, potential dangers of vacuum technologies are revealed, and safety measures for these dangers have been suggested. These dangers include considerable difference between the vessels' inner and outer pressures, condensation of flammable gases to the pump, electric shock due to a high voltage or electric leakage, involution to mechanical motion, touching of a high temperature during baking. Furthermore, many dangers exist when the system is under repair or maintenance. In addition to the vacuum system itself, the materials used for its operation such as liquid cryogen and organic solvents are more hazardous. Finally, some of the safety measures are proposed for the aforementioned dangers.

著者

金原 粲

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.53, no.6, pp.424-426, 2010 (Released:2010-07-07)

著者

金原 粲

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.54, no.12, pp.627-630, 2011 (Released:2012-01-12)

著者

清水 徹英 ミシェル ビラマヨア ジュリアン ケラウディ ダニエル ルンディン ウルフ ヘルマーソン

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.60, no.9, pp.346-351, 2017 (Released:2017-09-13)

参考文献数

29

被引用文献数

2

---

This is to review a novel approach stabilizing reactive mode at transition regime in reactive high-power impulse magnetron sputtering (R-HiPIMS). The proposed method is based on a real-time monitoring of peak discharge current. To stabilize the process conditions at a given set point, a feedback control system, which automatically regulates the pulse frequency, and thereby the average sputtering power, was implemented to maintain a constant maximum discharge current. As a representative result, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a R-HiPIMS of Hf in an Ar-N2 atmosphere illustrates that the discharge current waveform is an excellent indicator of the process conditions. Applicability of the proposed method was successfully demonstrated.

著者

秋山 泰伸

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.49, no.9, pp.535-540, 2006 (Released:2007-06-15)

参考文献数

19

被引用文献数

2 2

著者

桜木 史郎

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.42, no.11, pp.980-986, 1999-11-20

参考文献数

10

著者

野沢 善幸

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.53, no.7, pp.446-453, 2010 (Released:2010-08-19)

参考文献数

11

被引用文献数

1 5

---

Deep Reactive Ion Etching1-3) is well established as a commercial technique for forming Micro-Electro-Mechanical Systems (MEMS) devices. Over the last decade, development work has led to increases in silicon etch rate of an order of magnitude while requirements for etch depth uniformity and profile control have become more stringent as the wafer size has increased from 3 inch up to 200 mm.   Many MEMS devices are still etched on 150 mm wafers, while most IC devices requiring Chip Scale Package (CSP) or other processing relating to Advanced Packaging will be manufactured on 200 mm wafers with planned moves to 300 mm wafers in progress or imminent.   This paper describes the leading edge technology of Deep Si RIE including high rate etching and Through Silicon Vias (TSVs) hole formation on wafers up to 300 mm in diameter.

著者

青木 勝詔 鈴木 恵友 高梨 久美子 石井 一久 SATYANARAYANA B. S. 尾浦 憲治郎 古田 寛 古田 守 平尾 孝

出版者

一般社団法人 日本真空学会

雑誌

真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN (ISSN:05598516)

巻号頁・発行日

vol.49, no.7, pp.430-432, 2006-07-20

参考文献数

8

---

&nbsp;&nbsp;A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H₂ plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H₂ plasma etching was 3 V/&mu;m that was significantly lower than 10.4 V/&mu;m for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>

著者

庄子 習一 荒川 貴博 叶井 正樹 佐藤 寛暢

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.49, no.7, pp.395-399, 2006 (Released:2007-05-25)

参考文献数

21

被引用文献数

1 2

著者

石渡 信吾 鈴木 敦 岡 駿資 首藤 健一

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.58, no.12, pp.442-445, 2015 (Released:2015-12-29)

参考文献数

11

被引用文献数

1

---

In order to fabricate scanning probe tips, control of the electrochemical current is crucial to the radii of the head point. Equipment that monitors the current with a hysteresis switch, realized by means of a Schmitt trigger mechanism, enables the stable fabrication of high-quality tips. The details of the circuit design are described.

著者

梅原 徳次

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.50, no.2, pp.76-81, 2007 (Released:2008-01-01)

参考文献数

47

著者

鈴木 基史

出版者

一般社団法人 日本真空学会

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.57, no.8, pp.303-307, 2014 (Released:2014-08-25)

参考文献数

3

被引用文献数

2

---

Thin films have recently emerged as one of the most important building blocks of nanotechnology and are often prepared under vacuum conditions. For efficient production of high-quality thin films, it is important to understand the impact of the vacuum on each stage of the thin film deposition processes, including decomposition of the starting material, transport of its vapor, and deposition. This article discusses the general key aspects of the thin film deposition process from the viewpoint of vacuum science and technology.

著者

清水 肇 島田 寿男 平野 洋一 八木 康之 前嶋 良紀 引田 公

出版者

一般社団法人 日本真空学会

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.34, no.3, pp.178-181, 1991